PNP Bipolar Junction Transistor (BJT) in a TO-226 package for general-purpose amplification. Features a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 30V. Offers a minimum DC current gain (hFE) of 50 and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C, with a collector-emitter saturation voltage of 500mV. This through-hole component is lead-free and RoHS compliant, supplied in bulk packaging.
PackageTO-226
Current Rating-1.5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TN6726A technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 7.87mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 4.7mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Weight | 0.25g |
| Width | 3.93mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TN6726A Datasheet
Download the complete datasheet for Onsemi TN6726A to view detailed technical specifications.
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