
The ULN2003A is a 16-pin NPN bipolar junction transistor array from Onsemi, packaged in a small outline IC (SOIC) with a lead-frame SMT construction. It features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 0.5A. The device has a minimum DC current gain of 1000 at 350mA and 2V, and operates over a temperature range of -20 to 85 degrees Celsius.
Onsemi ULN2003A technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 16 |
| PCB | 16 |
| Package Length (mm) | 10(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.5(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Array 7 |
| Number of Elements per Chip | 7 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Collector-Emitter Saturation Voltage | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mAV |
| Minimum DC Current Gain | 1000@350mA@2V |
| Min Operating Temperature | -20°C |
| Max Operating Temperature | 85°C |
| Cage Code | 5V1P1 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi ULN2003A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.