Dual NPN/PNP Bipolar Junction Transistor (BJT) in a 6-lead SC-88/SC70-6/SOT-363 package, supplied on a 3000-piece tape and reel. Features a collector-emitter breakdown voltage of 50V, maximum collector current of 200mA, and a transition frequency of 142MHz. Offers a minimum DC current gain (hFE) of 200 and a maximum power dissipation of 385mW. Operates across a temperature range of -55°C to 150°C, with lead-free and RoHS compliance.
Frequency114MHz
PackageSC
Current Rating200mA
PolarityPNP, NPN
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Technical Specifications
Onsemi UMZ1NT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 114MHz |
| Gain Bandwidth Product | 114MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 200mA |
| Max Frequency | 114MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Power Dissipation | 385mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 142MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi UMZ1NT1G Datasheet
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