N-Channel Power MOSFET featuring 1.7kV drain-source breakdown voltage and 3A continuous drain current. Offers a maximum on-resistance of 10.5 Ohms and 55W power dissipation. Operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 55ns. Packaged in a TO-3PF-3L for 30 units per tube.
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Onsemi WPH4003-1E technical specifications.
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 1.7kV |
| Drain to Source Resistance | 8.2R |
| Drain to Source Voltage (Vdss) | 1.7kV |
| Element Configuration | Single |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 24.5mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 10.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 19ns |
| Width | 5.5mm |
| RoHS | Compliant |
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