Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M121, 4 PIN
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 800A I(C), 1400V V(BR)CES, N-Channel, M138, 4 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M128, 4 PIN
FUJI ELECTRIC 1MBI800UG-330 IGBT Array & Module Transistor, 800 A, 3.15 V, 9.6 kW, 3.3 kV, Module
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M122, 4 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 26A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
FUJI ELECTRIC 1MBI1200UE-330 IGBT Array & Module Transistor, 1.2 kA, 3.15 V, 14.7 kW, 3.3 kV, Module
FUJI ELECTRIC 1MBI1200U4C-170 IGBT Array & Module Transistor, Dual N Channel, 1.6 kA, 2.43 V, 7.35 kW, 1.7 kV, Module
Insulated Gate Bipolar Transistor, 26A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN