Transistor
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16
N-CH MOSFET 400V 14A TO-254 TH
Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
25A, 600V, SCR, TO-220AB, CASE 221A-07, 3 PIN
8A, 350V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-18,
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
7A, 250V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-213AA
MULTICOMP 2N6308 Bipolar (BJT) Single Transistor, NPN, 350 V, 5 MHz, 125 W, 8 A, 60
Silicon Controlled Rectifier, 25A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, CASE 221A, 3 PIN
