RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39, T-8, 3 PIN
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, METAL, TO-39, 3 PIN
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 120V; IC (A): 0.8A; HFE Min: 80; HFE Max: 240; VCE (V): 5V; IC (mA): 100mA; VCE(SAT) (V): 1V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 120+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 30V; IC (A): 0.8A; HFE Min: 100; HFE Max: 320; VCE (V): 1V; IC (mA): 100mA; VCE(SAT) (V): 0.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 120 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 12V; IC (A): 0.5A; HFE Min: 270; HFE Max: 680; VCE (V): 2V; IC (mA): 10mA; VCE(SAT) (V): 0.25V; IC (mA)1: 200mA; IB (mA): 10mA; FT Min (MHz): 320+ MHz; PTM Max (W): 0.15W; Package: SOT-523; package_code: SOT-523; mfr_package_code: SOT-523
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 120V; IC (A): 0.05A; HFE Min: 180; HFE Max: 560; VCE (V): 6V; IC (mA): 2mA; VCE(SAT) (V): 0.5V; IC (mA)1: 10mA; IB (mA): 1mA; FT Min (MHz): 140+ MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323