Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3

Inductor RF Chip Unshielded Wirewound 10uH 3% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R
Inductor RF Chip Unshielded Wirewound 10uH 2% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R
Inductor RF Chip Unshielded Wirewound 10uH 10% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R
Inductor RF Chip Unshielded Wirewound 10uH 1% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R

Inductor RF Chip Unshielded Wirewound 10uH 10% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R
Inductor RF Chip Unshielded Wirewound 10uH 3% 7.9MHz 24Q-Factor Ferrite 0.165A 3.45Ohm DCR T/R