Inductor Power Shielded Wirewound 3.61uH/3.3uH 20% 100KHz 2.17A 0.0547Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 2.25uH/2.2uH 20% 100KHz 2.45A 0.0429Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 22.09uH/22uH 20% 100KHz 1.12A 0.2053Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 1.69uH/1.5uH 20% 100KHz 2.88A 0.0312Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 681.2uH/680uH 20% 100KHz 0.216A 5.56Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 470.9uH/470uH 20% 100KHz 0.263A 3.74Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 8.41uH/8.2uH 20% 100KHz 1.61A 0.1Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 222uH/220uH 20% 100KHz 0.356A 2.04Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 0.49uH/0.47uH 20% 100KHz 3.59A 0.02Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 6.25uH/6.2uH 20% 100KHz 1.89A 0.072Ohm DCR 2020 T/R
Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 3 PIN