Photoelectric Sensor Reflective 50m 2-Pin
Thermal Cutoffs, 3.22 Inches, 228 Degree T-Function, 280 Degree T-Maximum
Fiber Sensor 2-Pin
Sensor; Photoelectric; Diffuse Sensing Mode; 35 to 85 %; -40 to degC
Analog Circuit
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, DBC4, 8 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, F-0127, 8 PIN
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT143, 4 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 2 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PACKAGE-6
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOP-8
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOP-8
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, DK, 5 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, F-0127, 8 PIN
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6
