SMD Power Inductor 0.22uH 79A 0.00017 Ohm DCR
PANASONIC ELECTRONIC COMPONENTS EEE-HA1H2R2AR ALUMINUM ELECTROLYTIC CAPACITOR, 2.2UF, 50V, 20%, SMD
Inductor Power Shielded Wirewound 0.3uH/0.216uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Inductor Power Shielded Wirewound 0.22uH/0.158uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 0.27uH/0.194uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Trans IGBT Module N-CH 600V 16A 23-Pin EUPEC
Inductor Power Wirewound 0.12uH/0.086uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 150nH/105nH 15% 100KHz Ferrite 50A 0.000185Ohm DCR T/R
Inductor Power Shielded Wirewound 150nH/108nH 10% 100KHz Ferrite 60A 0.00019Ohm DCR
Inductor Power Wirewound 0.18uH/0.13uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Wirewound 0.15uH/0.108uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 0.15uH/0.108uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Inductor Power Shielded Wirewound 0.27uH/0.194uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 0.15uH/0.108uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 0.18uH/0.13uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, MODULE-23
