Insulated Gate Bipolar Transistor
Trans IGBT Module N-CH 1700V 930A 4150000mW Automotive 8-Pin PRIME2-1 Tray
Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Laser Diode 1528.77nm 6mW 14-Pin Butterfly
Laser Diode 1529.55nm 10mW 14-Pin Butterfly
930A, 1700V, N-CHANNEL IGBT, MODULE-10
Insulated Gate Bipolar Transistor, 950A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
Laser Diode 1528.77nm 10mW 14-Pin Butterfly
Laser Diode 1528.77nm 8mW 14-Pin Butterfly
Laser Diode 1529.55nm 6mW 14-Pin Butterfly
Laser Diode 1529.55nm 8mW 14-Pin Butterfly
Laser Diode 1527.99nm 6mW 14-Pin Butterfly
