Search Results for "FLL810IQ-3C"

FET, P Channel, ID 15 A

FET, P Channel, ID 15 A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN

FET, P Channel, ID 15 A

L-Band High Power GaAs FET

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE MK, 2 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 2 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

FET, P Channel, ID 2.7 A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 2 PIN

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE MK, 2 PIN

Transistor

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 2 PIN

Rectifiers

FET, P Channel, ID 12 A

DIODE ARRAY GP 100V 250MA SOT23

Rectifier Diode, 2 Element, 0.25A, 100V V(RRM), Silicon