Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon,
Wide Band Medium Power Amplifier, 17500MHz Min, 20000MHz Max, 3.57 X 2.76 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Power Field-Effect Transistor, 13A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAC-5
Power Field-Effect Transistor, 12A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Variable Capacitance Diode, 8.2pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 10V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 25V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 6.8V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 11V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Wide Band Medium Power Amplifier, 17500MHz Min, 20000MHz Max, 0.00347 X 0.00263 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Low Power Amplifier, 36000MHz Min, 40000MHz Max, 1.46 X 1.06 MM, 0.11 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Medium Power Amplifier, 17500MHz Min, 31500MHz Max, 2.61 X 1.41 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Zener Diode, 5.6V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Low Power Amplifier, 17500MHz Min, 32000MHz Max, 1.65 X 1.44 MM, 0.08 MM HEIGHT, DIE
Power Field-Effect Transistor, 36A I(D), 150V, 0.04ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4-PAC-5
Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Abrupt,
