Power Field-Effect Transistor, 33A I(D), 200V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND ANTIMONY FREE, GREEN, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Zener Diode, 20V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
Variable Capacitance Diode, 22.5pF C(T), 30V, Silicon, SOT-23, 3 PIN
Variable Capacitance Diode, 33pF C(T), 30V, Silicon, Abrupt,
Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt,
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Variable Capacitance Diode, 10pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 9.1V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 33V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Medium Power Amplifier, 24000MHz Min, 27000MHz Max, 1.41 X 2.81 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Narrow Band High Power Amplifier, 29500MHz Min, 30000MHz Max, 4.23 X 2.62 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
PNP BJT Transistor, 100V, 1A, 50MHz, SOT-23
NPN BJT Transistor, 1.5A I(C), 80V V(BR)CEO, SOT-23
