SMD Power Inductor 220nH 50A Ferrite 10% 0.47mR DCR
SMD Power Inductor, 300nH, 51A, Ferrite, 0.48mR DCR, 10%
SMD Power Inductor, 120nH, 51A, 0.48mR DCR, Ferrite, 10%
SMD Power Inductor 0.15uH 50A 0.47mR Ferrite 10% T/R
SMD Power Inductor 0.16uH 45A 0.36mR DCR Ferrite
SMD Power Inductor 0.16uH 53A 0.27mR Ferrite 10%
SMD Power Inductor 170nH 51A Ferrite 0.48mR DCR 10%
Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23
Inductor Power Shielded Wirewound 0.22uH/0.158uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Inductor Power Shielded Wirewound 0.1uH/0.072uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, MODULE-23
Inductor Power Wirewound 0.15uH/0.108uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Inductor Power Shielded Wirewound 0.12uH/0.086uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Inductor Power Shielded Wirewound 0.3uH/0.216uH 10% 100KHz Ferrite 79A 0.00017Ohm DCR T/R
Inductor Power Shielded Wirewound 0.18uH/0.13uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
Trans IGBT Module N-CH 1200V 20A 105000mW 23-Pin EASY1B-1 Tray
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Inductor Power Shielded Wirewound 0.12uH/0.086uH 10% 100KHz Ferrite 72A 0.00012Ohm DCR
Inductor Power Wirewound 0.3uH/0.216uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
