Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
Fuse 40A 12000V Holder Pin 292 X 50.8mm
DC/DC CONVERTR NON-ISO 0.60-3.6V
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Lug Terminal (7.7/0)AWG Copper 71.4mm Tin
Conn FFC Connector SKT 12 POS 1mm Solder ST SMD T/R
Lug Terminal (4.7/0)AWG Copper 54.1mm Electro Tin
Flex Conductor Two-Hole Standard Barrel with Window Lug 90° Angle
Fiberglass Wall Mount Photovoltaic Combiner Box
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
Fuse 63A 12000V Holder Pin 292 X 50.8mm
Peltier element 6 A 52 W 14.4 V 63 °C, HT6-12-40, Melcor
Peltier element 2.8 A 24 W 14.4 V 63 °C, HT3-12-30, Melcor
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,
