RF Choke Wirewound 820uH 10% 796KHz 55Q-Factor Ferrite 100mA 12Ohm DCR AXL T/R
RF Choke Wirewound 100uH 10% 2.52MHz 30Q-Factor Ferrite 275mA 1.8Ohm DCR AXL T/R
RF Choke Wirewound 1mH 10% 796KHz 50Q-Factor Ferrite 100mA 17.4Ohm DCR AXL T/R

RF Choke Wirewound 1.8uH 10% 7.96MHz 55Q-Factor Ferrite 790mA 320mOhm DCR AXL T/R
RF Choke Wirewound 2.2uH 10% 7.96MHz 55Q-Factor Ferrite 750mA 350mOhm DCR AXL T/R
RF Choke Wirewound 330uH 10% 796KHz 65Q-Factor Ferrite 137mA 6.4Ohm DCR AXL T/R
RF Choke Wirewound 27uH 10% 2.52MHz 55Q-Factor Ferrite 390mA 940mOhm DCR AXL T/R
RF Choke Wirewound 22uH 10% 2.52MHz 40Q-Factor Ferrite 410mA 840mOhm DCR AXL T/R
RF Choke Wirewound 560uH 10% 796KHz 60Q-Factor Ferrite 120mA 8.5Ohm DCR AXL T/R
RF Choke Wirewound 220uH 10% 796KHz 70Q-Factor Ferrite 155mA 5.1Ohm DCR AXL T/R
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN