Search Results for "IRF451"

RF Choke Wirewound 12mH 10% 1KHz 50Q-Factor 60mA 88Ohm DCR AXL T/R

Inductors, Epoxy Conformal Coated, Axial Leaded

RF Choke Wirewound 2.7mH 10% 1KHz 80Q-Factor 110mA 18Ohm DCR AXL T/R

RF Choke Wirewound 8.2mH 10% 1KHz 60Q-Factor 70mA 62Ohm DCR AXL T/R

RF Choke Wirewound 1.5mH 10% 1KHz 80Q-Factor 160mA 10Ohm DCR AXL T/R

RF Choke Wirewound 22mH 10% 1KHz 40Q-Factor 45mA 180Ohm DCR AXL T/R

RF Choke Wirewound 33mH 10% 1KHz 40Q-Factor 30mA 250Ohm DCR AXL T/R

Inductors, Epoxy Conformal Coated, Axial Leaded

RF Choke Wirewound 15mH 10% 1KHz 50Q-Factor 55mA 102Ohm DCR AXL T/R

RF Choke Wirewound 30mH 10% 1KHz 40Q-Factor 35mA 240Ohm DCR AXL T/R

RF Choke Wirewound 2.7mH 10% 1KHz 80Q-Factor 110mA 18Ohm DCR AXL T/R

Power Field-Effect Transistor, 64A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

Power Field-Effect Transistor,

P-Channel MOSFET, 55V, 42A, 0.02 Ohm, TO-263AB

P-Channel MOSFET, -55V, -74A, 20mR, TO-263, SMD

P-Channel MOSFET, 55V, 42A, 0.02ohm, TO-263AB

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247