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N-CHANNEL MOSFET 800V 3.6A 3.6R 20V TO-263-3

TO-263, 3 PIN

Transferred

Package/Case: TO-263-3

Continuous Drain Current (ID): 3.6A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 3.6R

Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

TO-263, 3 PIN

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 7A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.4R

Distributor	Stock	1+	50+	100+	500+
TME	9	$4.91	$2.6	$2.37	$2.21

N-CHANNEL 800V 3.6A HiPerFET TO-220AB Through Hole

Not Recommended for New Design

Package/Case: TO-220AB

Continuous Drain Current (ID): 3.6A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 3.6R

Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Power Field-Effect Transistor,

Active