Search Results for "IXGN82N120C3H1"

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Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES,

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Obsolete

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Collector-emitter Voltage-Max: 3.9V

1200V 105A N-Ch IGBT, SOT-227-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.75V

Collector Emitter Voltage (VCEO): 1.2kV

Distributor	Stock	1+
TME	0	$52.66

IGBT MOD 1200V 145A 595W SOT227B

Volume Production

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Collector-emitter Voltage-Max: 3.2V

Insulated Gate Bipolar Transistor,

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