RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-4, 4 PIN
Rectifier Diode, 1 Phase, 1 Element, 16A, 1000V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-3P, PIN