Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, POW-R-BLOK-7
SCR THYRISTOR 250A 1.6KV POW-R-BLOK; Peak Repetitive Off-State Voltage, Vdrm:1.6kV; Gate Trigger Current Max, Igt:150mA; Current It av:250A; On State RMS Current IT(rms):393A; Peak Non Rep Surge Current Itsm 50Hz:8.8kA; No. of Pins:7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-7
SCR MOD ISO DUAL 1200V 210A
Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 2000V V(DRM), 2000V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-BLOK-5
Rectifier Diode, 1600V, 350A, 2-Element, Silicon
Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, POW-R-BLOK-5
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, POW-R-BLOK-5
DIODE MODULE 800V 260A POWRBLOK
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, POW-R-BLOK-5
DIODE MODULE 1.2KV 260A POWRBLOK
Silicon Controlled Rectifier, 330A I(T)RMS, 210000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-BLOK-5
Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, POW-R-BLOK-5
