Search Results for "R500M"

Inductor Power Shielded Wirewound 0.5uH 30% 100KHz 24A 0.0021Ohm DCR T/R

Power Field-Effect Transistor, 16A I(D), 500V, 0.325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN

RES SMD 500 MOHM 1% 1W 2010

SMD Power Inductor 0.5uH 10A Ferrite Shielded 7mR DCR

Inductor Power Shielded Wirewound 0.75uH/0.55uH 20% 100KHz Ferrite 13A 0.003Ohm DCR T/R

Inductor Power Shielded Wirewound 0.5uH 20% 100KHz Iron 23A 0.0019Ohm DCR T/R

Power Field-Effect Transistor, 19A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3/2 PIN

TT ELECTRONICS / WELWYN - LR2512-R50FW - SMD Chip Resistor, 2512 [6432 Metric], 0.5 ohm, LR Series, 200 V, Thick Film, 2 W

Inductor Power Shielded Wirewound 0.5uH 20% 100KHz 20Q-Factor Carbonyl Powder 37A 0.0013Ohm DCR Automotive T/R

Inductor Power Shielded Wirewound 0.5uH 20% 100KHz Iron 23A 0.0019Ohm DCR T/R

Inductor RF Wirewound 0.5uH 5% 7.9MHz Ferrite 0.41A 0.45Ohm DCR 0603 T/R

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Inductor RF Chip Unshielded Wirewound 0.5uH 5% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R

Inductor RF Chip Unshielded Wirewound 0.5uH 2% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R

Inductor RF Chip Unshielded Wirewound 0.5uH 2% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R

Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon,

Rectifier Diode, 1 Phase, 1 Element, 125A, 600V V(RRM), Silicon, DO-8,

DIODE GEN PURP 1.4KV 150A DO205

Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-8,

Rectifier Diode, 1 Phase, 1 Element, 100A, 1000V V(RRM), Silicon, DO-8,