Insulated Gate Bipolar Transistor, 775A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 4S, 22 PIN
SEMIX; Trench IGBT Module; 1700V; 800A
Insulated Gate Bipolar Transistor, 830A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 4, 11 PIN
