Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 3.6A 20mOhm DCR T/R
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 2.86 X 2.82 MM, DIE-2
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 3.92 X 3.88 MM, DIE-2
Inductor Power Shielded Wirewound 47uH 20% 100KHz 0.45A 1.02Ohm DCR 1515 T/R
AIRDUSTER, LOW GWP PROPELLANT, 300G
CLEANER, HD DEGREASER C
MULTICOMP MCCDSR-08 SOCKET, CHASSIS, 8 PIN
Poster; Warning; Black on Yellow; English; 17 x 22 In.; 5 per Box
IC EEPROM 770BYTE MCC2-2
MULTICOMP CM5006 Bridge Rectifier Diode, Single, 600 V, 50 A, GBPC, 1.2 V, 4 Pins
REFERENCE DESIGN MCP1631HV
Rectifier Diode, 2 Element, 0.2A, 300V V(RRM), Silicon, SOT-23, 3 PIN
Silicon Controlled Rectifier, 27000mA I(T), 1200V V(RRM),
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, 2.60 X 2.60 MM, DIE-2
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, DIE-3
FILTER UNIT, 80MM - More Details
Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, 4.04 X 4.00, DIE-2
Power Choke Shielded Wirewound 1uH 20% 1MHz 1.62A 0.088Ohm DCR 1008 T/R
