Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor, 125A I(C), 1700V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor,
IGBT MODULE, 600V, 400A, SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:5 ;RoHS Compliant: Yes
IGBT MODULE, 1.2KV, 220A, SEMITRANS 2N; Transistor Polarity:N Channel; DC Collector Current:220A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 94, SEMITRANS 2N, 5 PIN
Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, CASE D 95, SEMITRANS 2N, 5 PIN
SEMIKRON SKM200GARL066 T IGBT Module
IGBT, MODULE, 1.2KV, 913A; Transistor Polarity:NPN; DC Collector Current:913A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5; Packaging:Each ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 190A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
IGBT Module; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:900mV; No. of Pins:18; Operating Temperature Max:175 C; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 422A
IGBT, MODULE, 1.2KV, 313A
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56A, 11 PIN
Power Field-Effect Transistor
BOX ENCLOSURES SK1 Enclosure Accessory, 2.5", Sealing Kit, Series 1 Extrusions
BOX ENCLOSURES SK4 Enclosure Accessory, 6.68", Sealing Kit, Series 4 Extrusions
Contact Probes HEADLESS 60 DEG CHSL OUT CONDUCTER FLAT
Contact Probes HEADLESS 4PT CROWN OUT CONDUCTER SERR
