SSM6N35AFE,LF - Electronic Components Search

MOSFET 2N-CH 20V 0.18A ES6

Volume Production

Continuous Drain Current (ID): 180mA

Drain to Source Voltage (Vdss): 20V

FET Type: 2 N-Channel

Input Capacitance: 9.5pF

Trans MOSFET N-CH Si 30V 0.1A 6-Pin US T/R

Not Recommended for New Design

Package/Case: SOT-363

Continuous Drain Current (ID): 100mA

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.6R

MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD

End of Life

Continuous Drain Current (ID): 100mA

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 13.5pF

Max Power Dissipation: 150mW

Small Signal Field-Effect Transistor

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