Search Results for "SSR1N60BTM_WS"

MOSFET N-CH 600V 0.9A DPAK

MOSFET N-CH 600V 0.9A DPAK

Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

RDL SOLID STATE AUDIO RELAY, FREQUENCY RESPONSE: 20 HZ-23 KHZ, POWER REQUIREMENTS: 24-33 VDC, 40 MA, FEATURES: PROVIDES ABSOLUTELY SILENT SWITCHING OF TWO LINE LEVEL AUDIO SIGNALS, SELECTABLE FAST/SLOW SWITCHING PROVIDES SOFT CONTROL

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 45V V(RRM), Silicon, HERMETIC SEALED, MILPACK-3

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, HERMETIC SEALED, SMD1, 3 PIN

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, HERMETIC SEALED, MILPACK-3

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 90V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, LCC-28

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, TO-254, 3 PIN

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, TO-254Z, 3 PIN

TR SSR12250C CBL TIE 201 SST 1/4X12, CBL TIE 201 SST 1/4X12 IN REUSABLE

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, TO-257,

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, TO-254, 3 PIN

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-257,

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, HERMETIC SEALED, CERPACK-3

Common Mode Chokes Dual 5800uH 10kHz 1.7A 0.18Ohm DCR Thru-Hole Tray

Common Mode Chokes Dual 1600uH 10kHz 3A 0.06Ohm DCR Thru-Hole Tray

TR SSR12375C316 CBL TIE 316 SST 3/8, CBL TIE 316 SST 3/8X12 IN REUSABLE