Trans Voltage Suppressor Diode, 15000W, 6.8V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED PACKAGE-2

8 CHANNEL(S), TONE CONTROL CIRCUIT, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, TQFP-64
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 3-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, STA, SIP-8
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, STA, SIP-8
Power Field-Effect Transistor, 4A I(D), 60V, 0.45ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STA, 10 PIN
Power Bipolar Transistor, 4A I(C), 70V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, STA, SIP-8