Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN

THERMAL INSULATORS, THERMO PAD, TO-126; Insulator Body Material:Fibreglass, Silicone Elastomer; Thermal Conductivity:0.9W/m.K; Breakdown Voltage Vbr:4.5kV; Thickness:0.229mm; Volume Resistivity:10ohm-m; Thermal Impedance:1.45 C/W ;RoHS Compliant: Yes

Small Signal Field-Effect Transistor, 0.185A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN