Insulated Gate Bipolar Transistor, 260A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2, 11 PIN
Trans IGBT Module N-CH 1200V 418A 29-Pin
Trans IGBT Module N-CH 1200V 533A 29-Pin
Trans IGBT Module N-CH 1200V 533A 18-Pin
IGBT MODULE, 1.2KV, 240A, SEMIX 2; Transistor Polarity:N Channel; DC Collector Current:250A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 4, 11 PIN
IGBT MODULE, 1.7KV, 619A, SEMIX 33C
Development Software TrueANALYZER PERM LICENSCE
IGBT Module, Trench, Half-Bridge, 1200 V, 314 A Max., SEMiX 2s
Insulated Gate Bipolar Transistor, 650A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN
Development Software TrueANALYZER 3M TERM LICENSE
Development Software TrueANALYZER 6M TERM LICENSE
Development Software TrueVERIFIER 6M TERM LICENSE
Development Software TrueANALYZER 1M TERM LICENSE
IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS
Semikron SEMiX453GB12E4s, GB Series IGBT Module, 683 A max, 1200 V, Screw Mount
Insulated Gate Bipolar Transistor, 350A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN
IGBT MODULE, 1.2KV, 480A, SEMIX 3; Transistor Polarity:N Channel; DC Collector Current:490A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20 ;RoHS Compliant: Yes
IGBT MODULE, 1.2KV, 646A, SEMIX 3; Transistor Polarity:Dual N Channel; DC Collector Current:650A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:11 ;RoHS Compliant: Yes
Trans IGBT Module N-CH 1200V 364A 18-Pin
