NPN bipolar junction transistor in a TO-18 package, featuring an 80V collector-emitter breakdown voltage and a maximum collector current of 1A. This through-hole component offers a 100MHz transition frequency and a minimum hFE of 100. It operates across a temperature range of -65°C to 200°C and has a maximum power dissipation of 500mW.
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Stmicroelectronics 2N3700 technical specifications.
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Diameter | 5.8mm |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| Height | 5.3mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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