PNP Silicon Bipolar Junction Transistor (BJT) in a TO-18 metal package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 75 and a transition frequency of 200MHz. Designed for through-hole mounting with a maximum power dissipation of 1.8W. Operating temperature range spans from -65°C to 150°C.
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| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.6V |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.3mm |
| hFE Min | 75 |
| Length | 5.8mm |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.8W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Width | 5.8mm |
| RoHS | Compliant |
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