PNP Silicon Bipolar Junction Transistor, TO-18 metal package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Operates within a temperature range of -65°C to 175°C. Through-hole mounting with a lead-free and RoHS compliant design.
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| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | -60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Diameter | 5.8mm |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 5.3mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 5.8mm |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| Width | 5.8mm |
| RoHS | Compliant |
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