PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V maximum collector-emitter voltage and 0.6A maximum DC collector current. This single-element silicon transistor is housed in a 3-pin TO-18 metal package with a maximum height of 5.3mm and diameter of 5.8mm. Operating temperature range is -65°C to 200°C, with a maximum power dissipation of 400mW. DC current gain ranges from 75 to 100 depending on operating conditions.
PackageTO-18
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N2907AT1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 5.3(Max) |
| Package Diameter (mm) | 5.8(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.6A |
| Maximum Power Dissipation | 400mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | SCR76 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics 2N2907AT1 Datasheet
Download the complete datasheet for Stmicroelectronics 2N2907AT1 to view detailed technical specifications.
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