NPN bipolar junction transistor (BJT) in a TO-3 package, designed for high current applications. Features a maximum collector current of 20A and a collector-emitter voltage (VCEO) of 60V. Offers a maximum power dissipation of 150W and a transition frequency of 200kHz. This through-hole, chassis-mount component operates within a temperature range of -65°C to 200°C and is RoHS compliant.
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| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 20A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 200kHz |
| Gain Bandwidth Product | 200kHz |
| Height | 26mm |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Length | 39.3mm |
| Max Collector Current | 20A |
| Max Frequency | 200kHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bag |
| Polarity | NPN |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200kHz |
| DC Rated Voltage | 60V |
| Width | 8.92mm |
| RoHS | Compliant |
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