NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features 80V collector-emitter voltage and 5A continuous collector current. This single-element silicon transistor is housed in a TO-39 metal package with 3 leads. Maximum power dissipation is 1000mW, with an operating temperature range of -65°C to 200°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AF |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-39 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 40@5A@5V|[email protected]@5V|50@50mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | SCR76 |
| EU RoHS | No |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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