PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 150V and a maximum collector current of 0.6A. This single-element transistor is housed in a TO-18 metal package with a maximum height of 5.3mm and diameter of 5.8mm. Operating temperature range spans from -65°C to 200°C.
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Stmicroelectronics 2N5401HR technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 5.3(Max) |
| Package Diameter (mm) | 5.8(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 160V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 150V |
| Maximum DC Collector Current | 0.6A |
| Maximum Power Dissipation | 360mW |
| Material | Si |
| Minimum DC Current Gain | 50@1mA@5V|60@10mA@5V|60@50mA@5V|20@10mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | SCR76 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 100 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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