PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a minimum DC current gain (hFE) of 30 and a transition frequency of 15MHz. Housed in a TO-39 through-hole package, this RoHS compliant component offers a wide operating temperature range from -65°C to 200°C and a maximum power dissipation of 10W.
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Stmicroelectronics 2N5416 technical specifications.
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -2.5V |
| Collector Emitter Voltage (VCEO) | -300V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -1A |
| Diameter | 9.4mm |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 15MHz |
| Height | 6.6mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 9.4mm |
| Max Collector Current | 1A |
| Max Frequency | 15MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 10W |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N5416 |
| Transition Frequency | 15MHz |
| DC Rated Voltage | -350V |
| Width | 9.4mm |
| RoHS | Compliant |
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