N-channel MOSFET, designed for small signal applications. Features a 60V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low Drain to Source Resistance (Rds On Max) of 5 Ohms and a nominal threshold voltage of 2.1V. Packaged in a compact SOT-23 surface mount configuration, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C. Switching characteristics include a 5ns turn-on delay and a 15ns fall time.
PackageSOT-23
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics 2N7002 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
200mA
Current Rating
115mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Fall Time
15ns
Gate to Source Voltage (Vgs)
18V
Height
1.2mm
Input Capacitance
43pF
Lead Free
Lead Free
Length
3.026mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
2.1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
2.1V
Turn-Off Delay Time
7ns
Turn-On Delay Time
5ns
DC Rated Voltage
60V
Width
1.726mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N7002 Datasheet
Download the complete datasheet for Stmicroelectronics 2N7002 to view detailed technical specifications.
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