High power NPN epitaxial planar bipolar transistor designed for through-hole mounting. Features a maximum collector current of 12A and a maximum power dissipation of 100W. Offers a collector-emitter breakdown voltage of 140V and a transition frequency of 20MHz. Operating temperature range spans from -65°C to 150°C. This RoHS compliant component utilizes tin, matte contact plating.
Frequency20MHz
MountingThrough Hole
PolarityNPN
Power100W
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Technical Specifications
Stmicroelectronics 2SD1047 technical specifications.
General
Collector Base Voltage (VCBO)
200V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
hFE Min
50
Lead Free
Lead Free
Max Collector Current
12A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
100W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
100W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2SD1047 Datasheet
Download the complete datasheet for Stmicroelectronics 2SD1047 to view detailed technical specifications.
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