PNP Silicon Power Transistor, featuring a 250V Collector-Emitter Voltage (VCEO) and a maximum collector current of 17A. This through-hole mounted component offers a power dissipation of 200W and a transition frequency of 25MHz. It operates within a temperature range of -65°C to 150°C and boasts a minimum hFE of 80. The transistor is supplied in a TO-3P package and is RoHS compliant.
Frequency25MHz
MountingThrough Hole
PolarityPNP
Power200W
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Technical Specifications
Stmicroelectronics 2STA2120 technical specifications.
General
Collector Base Voltage (VCBO)
250V
Collector Emitter Breakdown Voltage
250V
Collector Emitter Saturation Voltage
3V
Collector Emitter Voltage (VCEO)
250V
Collector-emitter Voltage-Max
3V
Emitter Base Voltage (VEBO)
6V
Frequency
25MHz
Gain Bandwidth Product
25MHz
Height
18.7mm
hFE Min
80
Length
15.8mm
Max Collector Current
17A
Max Frequency
25MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Elements
1
Package Quantity
300
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
200W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
25MHz
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STA2120 Datasheet
Download the complete datasheet for Stmicroelectronics 2STA2120 to view detailed technical specifications.
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