PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 40V and a continuous collector current of 3A. Offers a maximum power dissipation of 1600mW and a minimum DC current gain of 100. Packaged in a SOT-223 (TO-261AA) plastic housing with gull-wing leads, this single-element transistor has a 4-pin configuration with a tab.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STN2340 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-223
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.8(Max)
Seated Plane Height (mm)
1.9(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
40V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
40V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1600mW
Minimum DC Current Gain
[email protected]@2V|180@1A@2V
Maximum Transition Frequency
100(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics 2STN2340 Datasheet
Download the complete datasheet for Stmicroelectronics 2STN2340 to view detailed technical specifications.
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