PNP bipolar junction transistor for low voltage, fast-switching applications. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of -40V. Offers a minimum hFE of 50 and a low collector-emitter saturation voltage of 450mV. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 1.6W.
PackageSOT-223
MountingSurface Mount
PolarityPNP
Power1.6W
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Technical Specifications
Stmicroelectronics 2STN2540 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
-40V
Collector Emitter Saturation Voltage
450mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
450mV
Emitter Base Voltage (VEBO)
6V
Height
1.8mm
hFE Min
50
Lead Free
Lead Free
Length
6.3mm
Max Breakdown Voltage
40V
Max Collector Current
5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STN2540 Datasheet
Download the complete datasheet for Stmicroelectronics 2STN2540 to view detailed technical specifications.
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