
PNP bipolar junction transistor for low voltage, fast-switching applications. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of -40V. Offers a minimum hFE of 50 and a low collector-emitter saturation voltage of 450mV. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 1.6W.
Stmicroelectronics 2STN2540 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | -40V |
| Collector Emitter Saturation Voltage | 450mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 450mV |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.8mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 6.3mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics 2STN2540 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
