NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a low collector-emitter saturation voltage of 430mV and a minimum hFE of 180. Packaged in a compact SOT-23 surface mount case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 500mW.
PackageSOT-23
MountingSurface Mount
PolarityNPN
Power500mW
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Technical Specifications
Stmicroelectronics 2STR1160 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
430mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
430mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Height
1.3mm
hFE Min
180
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STR1160 Datasheet
Download the complete datasheet for Stmicroelectronics 2STR1160 to view detailed technical specifications.
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