PNP Bipolar Junction Transistor (BJT) in a SOT-32 package, designed for complementary silicon power applications. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 20.8W. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
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Stmicroelectronics MJE350 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 10.8mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20.8W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Width | 2.7mm |
| RoHS | Compliant |
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