PNP Bipolar Junction Transistor (BJT) in a TO-220 package. Features a 80V Collector-Emitter Breakdown Voltage and a 5A Max Collector Current. Offers a low Collector-Emitter Saturation Voltage of 2V and a minimum DC current gain (hFE) of 1000. Operates across a wide temperature range from -65°C to 150°C with a 2W Power Dissipation. Through-hole mounting and RoHS compliant.
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Stmicroelectronics TIP126 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Width | 4.6mm |
| RoHS | Compliant |
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