
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 45V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 250mW. Packaged in a TO-236-3 (SOT-23) case, supplied on tape and reel.
Stmicroelectronics BC817-40 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 250 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BC817-40 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
