The BC857B is a PNP bipolar junction transistor with a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236-3 surface mount package and is not RoHS compliant due to the presence of lead.
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Stmicroelectronics BC857B technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
| RoHS | Not Compliant |
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